Abstract: SIS（Semiconductor-Insulator-Semicon ductor）capacitors is used to characterize the electrical properties of SIMOX SOI wafer.By introducing a coupling factor,an MOS-like equivalent circuit is obtained for the SIS capacitor.Therefore the existing measurement techniques and interface parameter extraction methods for the MOS capacitor can be directly applied to an SIS capacitor.SIMOX SOI wafers produced by ion implant processes were used in this experiment.The obtained results for SIMOX SOI samples revealed that this method has irrefragable advantage over conventional MOS capacitor structure.