化合物半导体近红外光荧光测试中的布里渊散射
Stimulated Brillium Scattering of the compound semiconductors in testing the near-intrared photoluminescence
-
摘要: 报告了InGaAsP/InP异质体材料光荧光测试中的受激布里渊散射, 实验表明, 该类材料在温度为20 150 K, 光入射功率为 4.56.0mW, 观测到光荧光谱 (PLS)中强度和频移对称的多声子伴线, 并讨论了它们的特性。Abstract: The stimulated Brillium Scattering of InGaAsP/InP heterostructure bulk materials in testing the near-infrared photoluminescence has been first reported. It showed as a matter of experience that as the temperature of the tested material is the rang of 20K to 150K, and the input optical power is 4.5 mW to 6.0 mW, the symmetrical in frequency-drift and in optical power, multiple-phonon accompanied rays in the photoluminescence spectrum may be observed.
下载: