Abstract: A kind of organic field effect transistor（OFET）based on indium-tin-oxide（ITO）electrode and polyimide insulator layer was reported,in which ITO material was magnetron sputtered as source/drain electrodes,and polyimide was spin coated as the insulator layer,respectively.In order to low the injection barrier,the novel organic semiconductor,phthalocyanine（CuPc）,was used as active layer.Experimental results show that this kind of OFET is of good performance,e.g.,the good I-V characteristic curve,high mobility（about 2.3*10-3cm²/V.s）and on/off ratio（nearly 800）are achieved simultaneously.It suggests that ITO is a suitable,promising source/drain electrode material for p-OFET.Finally,the influence of contact resistance（originating from the contact between source/drain electrode and active layer）on OFET performance is discassed.