Abstract: The GaN nanorods were successfully synthesized by means of a combination of microwave hydrothermal process and ammoniation at high temperature using Ga₂O₃ as raw material.The synthesized GaN and the precursor GaOOH were characterized by X-ray diffraction（XRD） and scanning electron microscope（SEM）.It is found that GaN nanorods with aspect ratio of 5:1 are composed of highly oriented nanoparticles.The nanorods belong to hexagonal structure,which crystal orientation is（002）.Photoluminescence（PL） shows the intrinsic emissions of GaN are observed at 367nm.Moreover,three broad weak excitation bands peaked at 468nm,493nm and 534 nm are also obtained,which will be promisingly applied to electro-optical field of GaN.