i基区渐变掺杂SiGe/Si异质结开关功率二极管的特性模拟

Characteristics simulation and analysis of SiGe/Si hetero-junction switching power diode with gradual changing doped N^-- region

摘要: 提出了在SiGe/Si异质结开关功率二极管的本征i区中采用掺杂浓度三层渐变式结构。由Medici模拟所得的特性曲线表明,该结构在正向I-V特性基本不发生改变的前提下,与i区固定掺杂结构相比具有更好的反向恢复电流与反向恢复电压特性,尤其软恢复特性更加明显,反向恢复过程加快。还对渐变掺杂所得到的优越性能进行了分析,从理论上给出了较好的解释。

Abstract: A novel p⁺ （Si_1-xGe_x-n^--n⁺ hetero-junction power diode with gradual changing doped n^--region is proposed. The device characteristics are simulated by Medici. Results show that the fast - switching and the soft recovery characteristics ot the device are much improved than the constant structure. The ascendant characteristics are also studied theoretically.