DFN封装器件热-结构模拟仿真分析

Simulation Analysis of thermal-structure for DFN Package

  • 摘要: 借助有限元模拟仿真软件ANSYS,研究分析了不同的封装体、芯片和框架厚度,以及散热底和芯片基岛尺寸对于小尺寸两边扁平无引脚(DFN)封装器件在回流焊温度条件下的热应力及翘曲变形分布影响。结果表明:封装体等效热应力最大处位置均位于框架、芯片和塑封料将银浆包裹处(即:银浆溢出的三角区域),其数值随封装体厚度减薄呈递减趋势;整体的热应力分布也随之沿着芯片、银浆和框架结合界面的中心位置向银浆三角区域延伸并逐步增大;对于薄型DFN封装体,芯片厚度、散热底和芯片基岛尺寸对于封装体总体翘曲变形的影响较小;框架厚度对于封装体总体翘曲变形及等效应力的影响较大;通过适当地减薄封装体厚度,并同时减薄框架厚度可以有效地降低封装体热应力,且总体翘曲变形都在1um以下。

     

    Abstract: The finite element modelling(FEM) simulation software ANSYS was used to investigate the influence of the package thickness,die thickness,leadframe(LF) thickness,exposed paddle size and die attach paddle size on the thermal stress and warpage of small size dual flat non-leaded(DFN) device packaging,which went through the reflow condition.The results show that the position of maximum von mises stress is located at the joint area which is encapsulated by the LF,die and molding compound(i.e.the die attach epoxy fillet height area),and the value is decreased upon the package thickness being decreased.The whole thermal stress distribution will be increased along the joint line of die,epoxy and LF from the package center position to the epoxy fillet height area.For the thin DFN package,the die thickness,exposed paddle size and die attach paddle size have little effect on the package warpage,while the LF thickness makes big effect on the von mises stress and warpage.Therefore,the package thermal stress can be decreased effectively by reducing the package thickness and the LF thickness,moreover,the warpage can also be controlled within 1μm.

     

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