InGaP/GaAsHBT费米统计律下的数值模拟计算

Numerical simulation of InGaP/GaAs HBT based on Fermi statistic function

    摘要
  • 摘要: 用费米分布函数对HBT结构中载流子的分布进行了计算,与常用的玻尔兹曼统计律得到的载流子分布进行了比较分析。同时在热场发射-扩散模型的基础上,用两种方法得到的载流子分布分别对InGaP/GaAs HBT进行了数值模拟计算和分析。

     

    Abstract: The distribution of the carriers in InGaP/GaAs HBTs based on Fermi statistic function was calculated.And the distribution of the carriers was compared with the result of calculations based on Boltzmann statistic function.At the same time,on the basis of thermionic field-diffusion model and the distribution of the carriers obtained from our calculations,the current performance of InGaP/GaAs HBTs was numerically investigated.

     

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