Abstract: A new way to improve the reliability of Partially Depleted SOI nMOSFETs was introduced and the hot carrier reliability of this new device was studied.This new way is to implant impurities into half of the back channel while performing back channel doping.The stress experimental results show that this new SOI nMOSFETs exhibits a lower hot carrier degradation in comparison with conventional SOI nMOSFETs.2-D device simulations show that lowered peak electrical field near the drain contributes to the lower hot carrier degradation HBC SOI nMOSFETs compared with the conventional SOI nMOSFETs.