氧对磁控溅射制备InN薄膜带隙的影响
Influence of oxygen on the band gap of InN film deposited by RF magnetron sputtering
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摘要: 本文用射频磁控溅射技术,以金属铟为靶材,在石英玻璃上制备出了InN薄膜,溅射气体为氩气(Ar)和氮气(N2)的混合气体,溅射压强为0.5Pa～1.0Pa。InN晶体呈六方纤锌矿结构,随着压强的不同,晶体取向发生明显的变化,制得的InN薄膜的带隙为2.1eV～2.3eV。X射线光电子能谱(XPS)和拉曼(Raman)分析氧原子以类似In2O3的形式存在,其存在会引起InN晶体质量变差,致使InN的带隙明显升高。Abstract: In this paper,indium nitride（InN） films were deposited onto quartz glass substrates by RF magnetron sputtering using an In target.The mixed gases of argon（Ar） and nitrogen（N2） were used as working gas,the sputtering pressures were varied in the range of 0.5Pa～1.0Pa.InN films had a wurtzite structure,and the orientation of InN films were obvious different under the different sputtering pressures.The bandgap of deposited InN films were 2.1eV～2.3eV.X-ray photoemission spectroscopy（XPS） and the Laman speculum indicated that the oxygen atoms were existed in the InN films like the form of In2O3,and it is the important reason to cause the InN film a higher banggap.
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