Abstract: LaNiO₃ thin films were deposited on Si （100） and Pt（111）/Ti/SiO₂/Si substrates by modified metalorganic decomposition technique（MOD）and rapid thermal annealing method. The structures of the films were characterized by X-ray diffraction （XRD）. XRD analysis show that the LaNiO₃ thin films on Si （100） and Pt（111）/Ti/SiO₂/Si substrates have single-phase perovskitetype structure and highly （100）-oriented. Scanning electron microscope （SEM） and atom force microscopy （AFM） images show the LaNiO₃ films with uniform and crack-free surfaces. The resisitivity versus temperature curves of the LaNiO₃ films show that the films have good metallic characteristic. The resistivity of the LaNiO₃ films is 7.8×10^-4Ω·cm at room temperature.The hysteresis loops show that LNO thin films can increase the remnant polarization of PZT thin films.