Abstract: PbZr_0.4Ti_0.6O₃/LaNiO₃（PZT/LNO）multilayer thin films were grown on Pt/Ti/SiO₂/Si substrates by a chemical solution route. The （111） orientation parameter decreases and （100） orienta-tion degree increases by adding LNO layer between PZT and Pt. PZT thin films deposited on LNO/Ptshow smooth surface morphology, denser structure than that deposited on Pt substrate. At an appliedelectric field of 500kV/cm, The remnant polarization （P_r） and coercive field （E_c） of the PZT thin films were obtained from the P-V loop measurements about 37.6μC/cm² and 65kV/cm, respec-tively. Dielectric constant is 822 by adding a LNO layer. The properties are improved most profoundlyby a LNO layer with thickness of 40nm.