Abstract: High quality GaN film was grown by hydride vapor phase epitaxy（HVPE） using porous AAO as mask.Scanning electron microscope（SEM） displays its cross-section morphology and cathode luminescence（CL） shows optical property at different positions of the as-grown layer.The optical property of GaN film improves with its thickness increasing.And the compressive stress in the GaN film is released by using AAO mask.