等离子体增强化学气相低温沉积碳化硅薄膜及其性质研究

CHARACTERIZATION OF SiCx FILMS DEPOSITED BY PLASMA-ENHANCED CHEMICAL VAPOR DEPOSITION（PECVD） AT LOW TEMPERATURE

    摘要
  • 摘要: 用等离子体增强化学气、相沉积（PECVD）方法，以CH4和SiH4为反应气体，在低电极温度（180℃）条件下制备了碳化硅薄膜。实验结果表明，低电极温度条件下沉积参数（反应气体流量比、反应气体压力、射频功率）的变化对薄膜的沉积和性质影响较大。制得的薄膜均匀性良好，其化学组成Si／C在0.72-4.0之间，具有（5-9）×109dyn／cm2的压应力。红外光谱结果证明，随着薄膜化学成分的变化，薄膜的结构也改变。同氮化硅薄膜相比，制得的碳化硅薄膜具有良好的抗溶液腐蚀性。

     

    Abstract: Amorphous Silicon Carbide (a-SiCx) thin films were deposited via Plasma-Enhanced Chemical Vapor Deposition (PECVD) method at low substrate temperature (180℃). The deposited films were characterized with ellipsometer, RBS, XPS as well as FTIR techniques to give refractive index, deposition rate, Si/C ratio and chemical bonding configurations, the stress and wet etch rate of SiCx films were also studied. By varying the deposition parameters, the correlation between the deposition parameters and properties were investigated. The results show that the deposited silicon carbide films have a good uniformity, and the composition range is 0.72-4.0. The films have compressive stress of (59)×108pa. The FTIR spectra show that the structure of the films varied with the composition.Comparing to the silicon nitride film, silicon carbide films have better etch resistance.

     

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