SiN<sub>x</sub>钝化膜厚度对pHEMT的性能影响

SiN_x钝化膜厚度对pHEMT的性能影响

摘要: 深入地研究了SiNx钝化膜厚度对AlGaAs/InGaAs/GaAs pHEMT电性能的影响，实验结果表明，pHEMT器件的截止频率随着氮化硅钝化膜厚度的增加而下降；当膜厚超过200nm时，将影响pHEMT器件电特性。

Abstract: The effect of silicon nitride passivation thickness on AlGaAs/InGaAs/GaAs pHEMT performance has been investigated extensively in this paper. The experiment results show that cut-off frequency will drop as the passivation thickness increase for pHEMT. The electronic performance of the pHEMT was affected severely when SiN_x thickness is larger than 200nm.