Abstract: Transparent amorphous oxide semiconductors are promising materials for field effect transistors(FETs) in a wide range of micro-electronic applications. Herein, we report the fabrication of FETs with nanostructured Zn-Sn-O (ZTO) as channel material.The close-packed hexagonal ZTO network was patterned using colloidal lithography.Electrical characterizations of the nanostructured ZTO-FET show a drain-source current on-off ratio of 3.9×10⁵ and effective electron mobilities of 2 cm²/Vs, whereas the gate leakage current is below 1 nA/cm².Self-assembled monolayers have been used to improve both the positive/negative bias-stress stability and hysteresis of the nanostructured ZTO-FET, which can be attributed to a reduction of contaminants on the oxide back channel surface.