功率型LED有机硅封装材料失效机理研究

Failure mechanisms of silicone encapsulant materials for high-power LEDs

  • 摘要: 本文研究了功率型LED封装器件在热应力作用下有机硅封装材料的劣化机理。通过对老化前后有机硅材料进行扫描电镜形貌观察、元素分析、热失重分析(TGA)、傅里叶变换红外光谱分析(FTIR)及差示扫描量热分析(DSC),发现热氧老化后的封装胶出现变脆、开裂等现象;与未老化样品相比,其表面更为粗糙,并有颗粒物析出。在老化开裂区域,硅元素含量显著高于未开裂边缘区域;红外光谱分析表明,失效样品的侧基发生了明显的氧化降解;热失重曲线与相变曲线进一步揭示,有机硅材料在热氧应力作用下同时发生老化降解与交联反应。由此推断,有机硅材料在热氧应力下的失效机理主要涉及侧基的氧化交联反应与主链Si—O结构的环化解聚反应两种化学机制。

     

    Abstract: This study systematically investigates the degradation mechanisms of silicone encapsulants in high-power LED packages under thermal stress. The silicone material was characterized before and after thermal aging using scanning electron microscopy (SEM) for morphology observation, energy-dispersive X-ray spectroscopy (EDS) for elemental analysis, thermogravimetric analysis (TGA), Fourier transform infrared spectroscopy (FTIR), and differential scanning calorimetry (DSC). The results indicate that thermo-oxidatively aged encapsulants exhibited brittleness, cracking, and other failure phenomena. Compared with unaged silicone, the aged specimen displayed a significantly rougher surface with suspected particulates. EDS analysis revealed substantially higher silicon content in aged/cracked regions than in intact areas. FTIR characterization further confirmed pronounced oxidative degradation of side chains in failed specimens. Thermal degradation and phase transition profiles derived from TGA and DSC suggested that silicone undergoes simultaneous degradation and cross-linking under thermo-oxidative stress. Based on comprehensive characterization and observations, the primary failure mechanisms are dominated by two pathways: oxidative cross-linking of side groups and cyclization depolymerization of the main Si-O chain.

     

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