Abstract: In this paper, the carrier transport characteristics of a high-performance SiGe-on-insulator p-channel metal-oxide-semiconductor field-effect transistor (SiGe-OI pMOSFET) are systematically investigated using a back-gate modulation method. High-quality SiGe-OI pMOSFET is fabricated based on selective remote GeO_x scavenging technology. Due to its excellent MOS interface properties, the effective hole mobility μ_eff reaches 136 cm²·(V·s)⁻¹ and 90 cm²·(V·s)⁻¹ at peak and high-field conditions (N_S=1×10¹³ cm⁻²), respectively. The modulating results show that, as the back-gate voltage becomes more negative, the μ_eff increases across the entire N_S range. Under the effective electric field model, when the effective electric field E_eff < 0.5 MV·cm⁻¹, the electric field dependence factor of the μ_eff is −0.3; as E_eff increases to 0.8 MV·cm⁻¹, this factor decreases only slightly to −0.6. This behavior indicates that phonon scattering is the dominant mechanism governing carrier transport in high-performance Si_0.73Ge_0.27-OI pMOSFETs.