Abstract: In the post-Moore Era, the dual bottlenecks of the "Memory Wall" and "Power Wall" constrain the performance enhancement of electronic systems. Magnetoresistive random access memory (MRAM), with its non-volatility, high integration density, and compatibility with complementary metal-oxide-semiconductor (CMOS) processes, has emerged as a key candidate device to overcome these performance limitations. Additionally, advanced packaging technologies, through high-density interconnections, provide a physical foundation for the efficient integration of MRAM with heterogeneous components. This paper systematically reviews the classifications and features of advanced heterogeneous integration technologies, including redistribution layer (RDL), microbump (μbump), hybrid bonding (HB), and through-silicon via (TSV). It focuses on three typical application scenarios — CMOS image sensors (CIS), mobile system-on-chips (SoCs), and computing architectures, and provides an in-depth analysis on the design schemes of MRAM based on heterogeneous integration. This study aims to offer theoretical and practical guidance for MRAM heterogeneous integration and to promote its industrial application in fields such as intelligent imaging and high-performance computing.