Abstract: A series of Zn_1-xSn_xO (x = 0.01-0.07) nanopillar samples were prepared on N-type heavily doped substrates by the sol gel method with different concentrations of Sn, and annealed at different temperatures (500 ℃, 600 ℃, 700 ℃).The photoelectric performance of the sample was characterized using light/dark current testing, and it was found that when the bias voltage was 5Ⅴ, the sample with x =0.04 exhibited the best light/dark current change ratio (600%) after annealing at 600 ℃ for 1 hour.The XRD and FE-SEM results show that the nanopillar sample has the maximum length and good crystallinity, indicating that the sample has a higher crystalline quality.PL testing found that the defect concentration of the sample was the smallest at x = 0.04, indicating that at this defect concentration, tin replaced zinc and produced more charge carriers, resulting in optimal optoelectronic performance.