集成电路用高纯镍铂靶材的制备及发展趋势

Preparation and Development Trend of High Purity Nickel-Platinum Targets for Integrated Circuits

  • 摘要: 本文围绕半导体集成电路产业的需求,综合说明了高纯镍铂靶材制备过程中纯度、组织及透磁率、表面质量的控制要求、技术难点及发展趋势。针对65 nm以下制程使用的高纯镍铂靶材,纯度方面由4N5(99.995%)逐步提升至5N(99.999%)及以上;组织及透磁率方面向精确调控晶粒取向追求高透磁同时保证组织均匀的方向不断优化;表面质量方面向低粗糙度方向不断发展。

     

    Abstract: Based on the demand of semiconductor integrated circuit industry, this paper comprehensively describes the control requirements, technical difficulties and development trend of high purity nickel-platinum target in the preparation process of purity, structure, permeability and surface quality. For the high purity nickel-platinum target used in the process below 65 nm, the purity gradually increased from 4 N5(99.995%) to 5 N(99.999%) and above. In terms of microstructure and permeability, the grain orientation should be precisely regulated to pursue high permeability while ensuring uniform microstructure. The surface quality is developing to low roughness.

     

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