Abstract: ZnO semiconductor material has been widely used in optoelectronic devices such as ultraviolet lasers, gas sensors, field emission transistors, photodetectors, piezoelectric sensors and so on. However, the unique structural defect of ZnO, namely the self-compensation phenomenon, limits its application in many optoelectronic devices. In this paper, the effects of dopants such as main group metal ions, transition metal ions and rare earth ions on the morphology and properties of ZnO nanoassembly systems are reviewed, and the development direction and application prospects of ZnO with special morphology prepared by dopants are prospected, so as to provide a reference for the preparation of ZnO nanomaterials with superior properties.