Abstract: Sb₂S₃ and Sb₂Se₃ are one of the most promising phase change materials for the development of low loss, modulable and non-volatile integrated photonic devices due to their low extinction coefficient, large refractive index difference and high thermal stability. In this paper, the thermal stability and refractive index properties of Sb₂S₃ and Sb₂Se₃ materials have been studied by in-situ heating electrical test platform and ellipsometry. A silicon based 1×1 non-volatile tunable optical switch based on Sb₂S₃ or Sb₂Se₃ film has been designed by hybrid integration of phase change materials and silicon based microring waveguide. The simulation analysis has been carried out by using the finite difference time domain (FTDT) method, and their device performance has been compared. It is shown that in the wavelength range of 1 518 ~1 575 nm, the extinction ratio (ER) and insertion loss (IL) of the Sb₂S₃-based optical switch are 20.63 dB and 1.35 dB, respectively. For Sb₂Se₃, ER=25.2 dB, IL=0.07 dB. Its ER is 6.5 dB higher than that of the conventional Ge₂Sb₂Te₅(GST)-based optical switch, and the IL is 1.88 dB smaller. Thus, Sb₂Se₃ is more attractive in improving the performance of optical switches such as extinction ratio and insertion loss.