Abstract: In this work, a new scheme to fabricate patterned electrodes of silicon heterojunction backcontact (HBC) solar cells by using laser ablation instead of photolithographic mask alignment technology, which is proposed to simplify the process steps and reduce production costs. The basic structure unit of a-Si: H(i/p) is used as an example to prove the feasibility of the suggested scheme. Firstly, after initial deposition of amorphous silicon film a-Si: H(i/n⁺), a-Si: H(i) layer appears when a-Si: H(n⁺) was ablated by the laser with a power of 7.8 W, the width of the ablation groove observed under the 3D microscope is about 51.9±1.4 μm. Then a layer of a-Si: H(p) was deposited to contact with the exposed a-Si: H(i) so that forming a hetero-pn junction with the n-type substrate silicon wafer, thus obtaining the emitter a-Si: H(i/p) basic structural unit. In the air atmosphere, the effect of laser on amorphous silicon will generally cause the formation of an insulating oxide layer in the ablation area and affect the transport of photo-carriers. The insulating oxide layer can be removed by soaking in hydrofluoric acid (HF) solution, after soaking for 15 s, the thickness of the oxide layer is reduced to 1/3 of that of the unsoaked sample. Comparing the PL images and effective minority lifetimes before and after laser ablation, we have found there are two possible reasons to influence the passivation performance during laser ablation. On the one hand, the remaining film thickness became thinner due to a part of film was ablated, which determines the passivation ability descending. On the other hand, the hydrogen content in the film on the a-Si(i)/c-Si interface marginally losses owing to the thermal-effects of laser ablation process, which must lead to the silicon dangling bonds are booming that is to say the increasing deep-level defect density promote the recombination of photo-carriers. Additionally, we also have found a crystalline microstructure in the part of remaining passivation film, which is a powerful proof of H-desorption after laser ablation. Therefore, it presents both the decreasing lifetime and the deteriorated PL images after laser ablation. In view of the decreasing phenomenon of H content, we employ hydrogen plasma treatment (HPT) to recover the passivation samples after laser ablation, the PL images show that the carrier recombination is significantly reduced and the effective minority carrier lifetime is doubled from 258 μs to 528 μs, effectively repairing the passivation damage caused by the laser ablation process.