Abstract: Surface-enhanced Raman scattering (SERS) devices are functional units that integrate SERS-active materials with electrical components, such as electrode structures, gating structures, or electrolytic cell systems. Through external ports, these devices apply signals, such as electric fields or electric-field-like effects, to achieve dynamic and reconfigurable regulation of SERS performance. In this configuration, the external electric field alters the Fermi level or band structure of the SERS-active materials, either directly or indirectly. This modulation adjusts charge-transfer resonance conditions and dynamically optimizes SERS performance for various analytes and scenarios, thereby overcoming the limitations of fixed performance in conventional SERS materials. However, current electric-field-modulated SERS devices exhibit diverse types and mechanisms, and a systematic review and classification are still lacking. Based on device configurations, this paper categorizes them into three-terminal and two-terminal configurations for a systematic exposition. Three-terminal devices include field-effect transistors and electrochemical three-electrode systems, whereas two-terminal devices encompass methods such as two-electrode current regulation and modulation based on electric-field-like effects, including thermoelectric, pyroelectric, and ferroelectric effects. By summarizing the modulation principles and performance characteristics of various devices, this paper identifies future prospects for improving detection limits, achieving non-volatile modulation, and enabling device anti-counterfeiting. It aims to promote cross-disciplinary integration among SERS, electronics, and electrochemistry, and to contribute to the practical application of electric-field-modulated SERS devices.