Abstract: The 193 nm ArF excimer laser serves as the key light source for advanced semiconductor photolithography, where reliable in situ power monitoring imposes stringent demands on wavelength-shifting materials, including high vacuum-ultraviolet (VUV) absorption, rapid response, and excellent resistance to long-term irradiation. Owing to the intrinsic limitations of both conventional photodetectors and 193 nm radiation, direct detection in the VUV region remains challenging. Consequently, converting VUV photons into visible emission through wavelength-shifting materials has become an effective strategy for improving detection efficiency. Focusing on 193 nm VUV detection as the primary application scenario, this review summarizes recent advances in representative wavelength-shifting materials, including organic fluorophores, inorganic phosphors, scintillation crystals, and luminescent glasses. Particular attention is given to Ce³⁺/Tb³⁺ co-doped systems, with emphasis on the roles of Ce³⁺-sensitized VUV absorption, Ce³⁺→Tb³⁺ energy transfer, and local structural regulation in determining wavelength-conversion performance. The key challenges associated with quantum efficiency, irradiation stability, material preparation, and spectral matching are also discussed. Finally, future research directions are outlined, including compositional optimization, energy-level engineering, defect regulation, and systematic evaluation of irradiation stability for materials designed for 193 nm applications. This review aims to provide comprehensive guidance for the rational design of high-performance VUV wavelength-shifting materials and facilitate their practical implementation in 193 nm photodetection.