Abstract: The exponential growth of big data and the rapid advancement of artificial intelligence have imposed unprecedented demands on computing performance. However, the conventional von Neumann architecture, characterized by the physical separation of memory and processing units, has become a critical bottleneck, primarily due to the "memory wall" constraint. Memristors, which offer high read/write speeds and low power consumption, are widely regarded as promising candidates for next-generation non-volatile memory. Nevertheless, a single mode of memristive behavior cannot satisfy the diverse requirements of multifunctional integrated electronic devices. Therefore, achieving controllable switching between analog and digital memristive effects within a single device is of considerable importance. In this work, an Ag/AZO/MnO₂/FTO memristive device was fabricated, and the modulation of its resistive switching characteristics was investigated by varying the voltage amplitude. The results reveal that increasing the amplitude induces a transition from analog to digital memristive behavior. At low voltage amplitudes, the device exhibits analog resistive switching, which originates from the modulation of the Schottky barrier height at the metal/functional-layer interface. In contrast, at high voltage amplitudes, the device switches to digital memristive behavior, dominated by the formation and rupture of conductive filaments within the functional layer. Thus, this device integrates both Schottky barrier modulation and conductive filament dynamics, thereby demonstrating switchable analog and digital resistive switching characteristics. This work provides new insights into the development of multimode memristors and establishes a hardware platform for hybrid electronic devices that combine analog synaptic plasticity with digital switching behavior.