相位单元和光栅辅助型微环的传感特性分析

Analysis of sensing characteristics in phase unit and grating-assisted microring resonators

  • 摘要: 针对硅基微环在传感应用中存在的探测范围受限和检测极限较高的问题,本文提出一种相位单元和光栅辅助型微环结构。该结构通过在总线波导中引入T型相位单元激发非对称Fano共振,并在微环波导侧壁引入光栅结构以实现侧模抑制,进而通过追踪具有侧模抑制特性的Fano线型频谱来提升传感性能。采用时域有限差分法,系统研究了光栅周期、刻蚀深度及占空比对光谱侧模抑制特性的影响规律。经结构参数优化,微环的自由光谱范围扩大至39.19 nm,约为传统微环的3倍,且有效抑制了次级侧模。在折射率传感性能评估中,该结构在纯水及不同浓度甘油溶液环境下表现出显著的谐振红移。得益于Fano线型极陡峭的光谱边缘,其强度传感灵敏度达7.11×103 dB/RIU,检测极限低至1.41×10−7 RIU。与传统微环结构相比,该结构实现了近3倍的灵敏度提升和约70.5%的检测极限降低。该相位单元和光栅辅助型微环结构能显著降低检测极限并扩大可探测范围,为高集成度、高精度的硅基光学传感器设计提供了重要参考。

     

    Abstract: To address the limited detection range and high detection limit inherent in silicon-based microring resonator sensors, this study proposes a microring resonator structure assisted by a phase unit and gratings. A T-shaped phase unit is introduced into the bus waveguide to excite asymmetric Fano resonance, while gratings patterned on the sidewall of the ring waveguide suppress lateral modes. By tracking the Fano lineshape resonance under such mode suppression, sensing performance is substantially improved. Using the finite-difference time-domain method, the influences of grating period, etching depth, and duty cycle on side-mode suppression are systematically investigated. Through structural optimization, the free spectral range is extended to 39.19 nm, approximately three times that of a conventional microring resonator, while secondary side modes are effectively suppressed. In refractive index sensing evaluations performed in pure water and glycerol solutions of varying concentrations, the proposed structure exhibits pronounced resonant redshifts. Benefiting from the ultra-steep Fano lineshape resonance, an intensity sensitivity of 7.11×103 dB/RIU and a detection limit as low as 1.41×10−7 RIU are achieved. Compared with conventional microring structures, this represents a nearly 3-fold improvement in sensitivity and a 70.5% reduction in the detection limit. The proposed phase-unit and grating-assisted microring resonator structure significantly lowers the detection limit while expanding the detection range, offering valuable insights for the design of highly integrated and high-precision silicon-based optical sensors.

     

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