Abstract: With the progress of science and technology and the improvement of living standard, people's demand for display technology is increasing day by day. Indium gallium zinc oxide (IGZO) material is the preferred material for thin film transistor (TFT) technology because of its high mobility, good flexibility, high stability and transparency. In this paper, the basic properties and preparation methods of IGZO thin films are described in detail, the latest research progress of IGZO thin films is tracked, the existing problems of IGZO thin films are analyzed, and the advantages and disadvantages of various modification methods and the key research directions in the future are discussed. Finally, the application prospect and development direction of IGZO thin film materials in the field of panel display technology are pointed out, which can provide scientific reference for the in-depth research and industrial application of IGZO transistors.