Abstract: Series of nc-Si:H films were prepared by using Plasma Enhanced Chemical Vapor Deposition （PECVD） system with RF（13.56MHz） and DC bias stimulating. The instrinsic stress of doped hydro-genated nano-crystalline silicon （nc-Si:H） film was measured entirely. Its microstructure was inves-tigated by using X-ray Diffraction （XRD）, Raman Spectrum Meter, Atomic Force Microscope （AFM） and High Resolution Transmission Electron Microscope （HRTEM）. The results show that the intrinsic stress is intensively dependent on the microstructure and varies with the depositing parameters of nc-Si:H films,i.e., the compressive stress increases with the increasing of the doping ratio（B₂H₆（PH₃）/SiH₄ vol% ） in both B-doped and P-doped nc-Si:H films. The compressive stress decreases with the increasing of the RF power density, and then changes into tensional stress within a certain range of RF power density. The compressive stress increases with the increasing of the substrate temperature between 373K and 523K. And the compressive stress alters with the variation of dilution ratio of H₂ deleted SiH₄ （SiH₄/H₂ vol% ）.