QIU Peng, ZHU Minmin, HU Wei, ZHANG Haizhong. Field-free switching of spin-orbit torque in BiSb/wedge ferromagnetic structure[J]. Journal of Functional Materials and Devices, 2024, 30(4): 197-205. DOI: 10.20027/j.gncq.2024.0025
Citation: QIU Peng, ZHU Minmin, HU Wei, ZHANG Haizhong. Field-free switching of spin-orbit torque in BiSb/wedge ferromagnetic structure[J]. Journal of Functional Materials and Devices, 2024, 30(4): 197-205. DOI: 10.20027/j.gncq.2024.0025

Field-free switching of spin-orbit torque in BiSb/wedge ferromagnetic structure

  • In this work, the micromagnetic simulation confirms that it is feasible to realize deterministic field-free switching by driving topological insulator/wedge ferromagnetic heterostructure with ultra-low current density. In addition, we studied the effects of wedge-shaped ferromagnetic layer size, interfacial Dzyaloshinskii-Moriya Interaction(DMI), field-like torque and tilted perpendicular magnetic anisotropy off-pole angle on spin-orbit torque field-free switching. Through comprehensive optimization, the minimum critical switching current density of the topological insulator(BiSb)/wedge-shaped ferromagnetic heterostructure can be reduced to 9.0×106 A/cm2, which is 1~2 orders of magnitude lower than that of the traditional heavy metal/ferromagnetic structure. This research is of great significance for promoting the industrial application of low-power spin-orbit torque magnetic random-access memory.
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